Heterogeneously integrated tunable III-V/Si lasers

We present our fully integrated tunable lasers, fabricated on a high-volume, 300-mm III-V/Si heterogenous integration platform, for both O- and C-bands. These lasers achieve a tuning range of over 50 nm, a side-mode suppression ratio (SMSR) of greater than 50 dB, and a Lorentzian linewidth of less than 30 kHz. Additionally, the relative intensity noise (RIN) remains below -145 dB/Hz across the entire tuning range. The on-chip optical power exceeds 10 dBm, and when combined with an integrated semiconductor optical amplifier (SOA), it surpasses 17 dBm. When locked to an external wavelength reference, the frequency error remains below 1 GHz, even with changes in chip temperature. These tunable lasers can be seamlessly integrated with other silicon-based photonic components, such as high-speed modulators and detectors, making them suitable for a wide range of applications, including optical communication and sensing.

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Publication Details

Published
2025-03-19
DOI
https://doi.org/10.1117/12.3048434
Primary Topic
Photonic and Optical Devices
Type
article
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article

Heterogeneously integrated tunable III-V/Si lasers

Haisheng Rong, Mahtab Hakami, Adam Bowles, Ranjeet Kumar et al.
Photonic and Optical Devices
article

Heterogeneously integrated tunable III-V/Si lasers

Haisheng Rong, Mahtab Hakami, Adam Bowles, Ranjeet Kumar, David Gold, Hari Mahalingam, Dingcheng Huang, Chenyang Wu, Richard Jones, Guan-Lin Su
article en

Abstract

We present our fully integrated tunable lasers, fabricated on a high-volume, 300-mm III-V/Si heterogenous integration platform, for both O- and C-bands. These lasers achieve a tuning range of over 50 nm, a side-mode suppression ratio (SMSR) of greater than 50 dB, and a Lorentzian linewidth of less than 30 kHz. Additionally, the relative intensity noise (RIN) remains below -145 dB/Hz across the entire tuning range. The on-chip optical power exceeds 10 dBm, and when combined with an integrated semiconductor optical amplifier (SOA), it surpasses 17 dBm. When locked to an external wavelength reference, the frequency error remains below 1 GHz, even with changes in chip temperature. These tunable lasers can be seamlessly integrated with other silicon-based photonic components, such as high-speed modulators and detectors, making them suitable for a wide range of applications, including optical communication and sensing.

Openalex Percentile: Top 96%
Photonic and Optical Devices
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Heterogeneously integrated tunable III-V/Si lasers — Haisheng Rong, Mahtab Hakami, et al. · (2025) | TGRS Research Map | TGRS