1390nm dilute nitride VCSELs on 150mm GaAs

GaAs-based dilute nitrides are emerging as a promising alternative to InP-based emitters for telecommunication wavelengths of 1.3µm and 1.55µm. These materials enable eye-safe applications like automotive LiDAR and integration with OLED displays in smartphones. By adding nitrogen to InGaAs quantum wells, the bandgap is significantly reduced, achieving wavelengths not possible with traditional GaAs emitters. In this study we report on a wafer grown by IQE plc via MBE and processed at Cardiff University using the VCSEL Quick Fabrication method to evaluate uniformity and performance of VCSELs with oxide apertures ranging from 3 to 7 μm.