Coherent ring VCSELs for high power, narrow linewidth applications

The coherent ring VCSEL (CR-VCSEL) structure developed at Dallas Quantum Devices is a monolithic, narrow linewidth high power device configuration that can be fabricated using typical VCSEL epitaxy and conventional processing techniques. So far, CR-VCSELs have demonstrated CW output power greater than 500mW with linewidths less than 0.2nm, power conversion efficiency greater than 30%, with full angle divergence angle less than 10 degrees. In applications where they are appropriate, CR-VCSELs should enjoy significant cost advantages over other high power, narrow linewidth semiconductor laser configurations.

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Publication Details

Published
2025-03-19
DOI
https://doi.org/10.1117/12.3044341
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73
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Coherent ring VCSELs for high power, narrow linewidth applications

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Coherent ring VCSELs for high power, narrow linewidth applications

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article en
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Abstract

The coherent ring VCSEL (CR-VCSEL) structure developed at Dallas Quantum Devices is a monolithic, narrow linewidth high power device configuration that can be fabricated using typical VCSEL epitaxy and conventional processing techniques. So far, CR-VCSELs have demonstrated CW output power greater than 500mW with linewidths less than 0.2nm, power conversion efficiency greater than 30%, with full angle divergence angle less than 10 degrees. In applications where they are appropriate, CR-VCSELs should enjoy significant cost advantages over other high power, narrow linewidth semiconductor laser configurations.

Georgia Institute of Technology (US), Quantum Devices (United States) (US)
Affordable and clean energy
Openalex Percentile: Top 30%
Semiconductor Lasers and Optical Devices
0.73
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