Direct growth of O-band quantum dot lasers on silicon

Growing III-V O-band lasers directly on patterned silicon photonics wafers has the potential to decrease the cost and increase the manufacturing throughput of integrated photonics chips needed for applications in data communications. However, this process introduces new challenges in materials growth and device design that are not present in current hybrid and heterogeneous integration techniques. In this work, we address the challenges associated with III-V growth on patterned silicon and present integrated O-band quantum dot lasers grown directly on 300 mm silicon photonics wafers.