High-efficiency UV-A lasers using GaN waveguides on native GaN substrates
In this work, 376 nm laser diodes incorporating unintentionally doped GaN waveguide layers were demonstrated. The devices achieved output powers exceeding 3 W under pulsed operation, with a cavity length of 750 µm and a ridge width of 10 µm. The threshold current was 625 mA, and the slope efficiency surpassed 1.1 W/A. From a linear fit of inverse differential efficiency values as a function of cavity lengths, an internal loss of 6.38 cm<sup>-1</sup>, and an injection efficiency of 39.8% were obtained. The low internal loss suggests that GaN's band-edge absorption at 376 nm (or even shorter wavelengths) may be less significant than presumed, offering increased flexibility for epitaxial structure design.
Authors
- Matthew Dwyer (ORCID: https://orcid.org/0000-0002-1318-1985)
- Shubhra S. Pasayat
- Matthew Seitz (ORCID: https://orcid.org/0000-0003-1318-3857)
- Chirag Gupta (ORCID: https://orcid.org/0000-0003-4143-9231)
- Surjava Sanyal
- L. J. Mawst (ORCID: https://orcid.org/0000-0001-6843-5332)
- Guangying Wang (ORCID: https://orcid.org/0000-0002-4278-3037)
- Nelson Tansu (ORCID: https://orcid.org/0000-0002-3811-9125)
- Jing Zhang (ORCID: https://orcid.org/0000-0002-9225-4360)
- Cheng Liu (ORCID: https://orcid.org/0000-0002-1964-5955)
- Qinchen Lin (ORCID: https://orcid.org/0009-0006-6406-4240)
- Tom Earles
Institutions
- University of Wisconsin–Madison (US)
- Rochester Institute of Technology (US)
- The University of Adelaide (AU)
Publication Details
- Published
- 2025-03-19
- DOI
- https://doi.org/10.1117/12.3044327
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00