Design study on large-area all-semiconductor PCSELs

We present a design study on large-area photonic crystal surface emitting lasers (PCSELs) with an InGaP/GaAs all-semiconductor photonic crystal designed to emit at λ = 1070 nm. Using simulation tools based on coupled-wave theory for PCSELs we model square cavity PCSELs of lateral size L × L and show that a unit cell with square lattice periodicity and a stretched isosceles triangle (SIT) feature is suitable for realising large-area devices (1 mm< L < 3 mm). We make a comparison between the optimised SIT structure and a right-isosceles triangle feature, demonstrating the clear benefits of the SIT design in realising large mode discrimination and high efficiency at large L, achieving comparable performance to best-in-class air-void PCSEL designs.