Flexible mode locking in photonic band-gap semiconductor laser
We propose a mode-locked semiconductor laser without saturable absorber based on an engineered hybrid multimode photonic crystal cavity. We show that mode locking can arise solely from carrier population pulsations provided that the dispersion of the engineered resonator is sufficiently low. We experimentally demonstrate passive-mode locking under certain ranges of current injection. The mode-locking frequency is found to increase by more than 1 GHz when the injected current is varied. We demonstrate fast tuning of the mode-locked frequency by modulating the injection current at 50 kHz.
Authors
- Stéphane Malhouitre (ORCID: https://orcid.org/0000-0002-5464-4835)
- Nicolas Vaissière (ORCID: https://orcid.org/0000-0003-3568-1670)
- Alfredo De Rossi (ORCID: https://orcid.org/0000-0001-9769-7905)
- Delphine Néel
- Emmanuel Bourgon (ORCID: https://orcid.org/0009-0001-9464-6763)
- S. Combrié
- Alexandre Shen (ORCID: https://orcid.org/0009-0003-0772-8512)
Institutions
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Thales (France) (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- III V Lab (FR)
Publication Details
- Published
- 2025-03-19
- DOI
- https://doi.org/10.1117/12.3039018
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00