Active-matrix micro-LED display driven by IGZO/IZO TFT-integrated ReRAM unit

We demonstrate a compact active-matrix driving component, consisting of one IGZO/IZO thin-film transistor and one GeTe ReRAM, by replacing conventional 2T-1C driving unit, for realizing high-resolution micro-LED displays. The brighness/contrast of the light emission is varied with different current/resistance levels of GeTe-based ReRAM, determined by multilevel characteristic of ReRAM, under the control of saturation currents of IGZO/IZO transistor. As a result, letter ‘A’ was realized by pulse-width modulation as well as pulse-amplitude modulation. More details will be presented at the conference.

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Publication Details

Published
2025-03-19
DOI
https://doi.org/10.1117/12.3043141
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Active-matrix micro-LED display driven by IGZO/IZO TFT-integrated ReRAM unit

Seok Hee Hong, Tae Geun Kim, Sung-Jin Choi, Nahyun Kim et al.
Semiconductor Lasers and Optical Devices
article

Active-matrix micro-LED display driven by IGZO/IZO TFT-integrated ReRAM unit

Seok Hee Hong, Tae Geun Kim, Sung-Jin Choi, Nahyun Kim, Ho Jin Lee, Sim Hun Yuk
article en

Abstract

We demonstrate a compact active-matrix driving component, consisting of one IGZO/IZO thin-film transistor and one GeTe ReRAM, by replacing conventional 2T-1C driving unit, for realizing high-resolution micro-LED displays. The brighness/contrast of the light emission is varied with different current/resistance levels of GeTe-based ReRAM, determined by multilevel characteristic of ReRAM, under the control of saturation currents of IGZO/IZO transistor. As a result, letter ‘A’ was realized by pulse-width modulation as well as pulse-amplitude modulation. More details will be presented at the conference.

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