High-capacity sparse modulation code for holographic data storage

Holographic data storage (HDS) is considered a promising technology for the next generation of data storage. Since HDS records two-dimensional data pages in three-dimensional storage media, it can achieve ultra-high capacity and extremely fast data transfer rates. However, such a high data density inevitably leads to crosstalk between pixels, resulting in data reading errors. In this paper, a 6:32 sparse modulation code is proposed, and a 2D data page is constructed comprehensively. The experimental results indicate that the 6:32 sparse modulation code can effectively suppress crosstalk between pixels and further enhance the data density of HDS.

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Publication Details

Published
2025-03-19
DOI
https://doi.org/10.1117/12.3045853
Primary Topic
Phase-change materials and chalcogenides
Type
article
Field-Weighted Citation Impact
0.00
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article

High-capacity sparse modulation code for holographic data storage

Yongkun Lin, Shujun Zheng, Hongjie Liu, Junchao Jin et al.
Phase-change materials and chalcogenides
article

High-capacity sparse modulation code for holographic data storage

Yongkun Lin, Shujun Zheng, Hongjie Liu, Junchao Jin, Dakui Lin, Xiaodi Tan, Haiyang Song, Xu Zheng, Xiao Lin, Ruying Xiong
article en

Abstract

Holographic data storage (HDS) is considered a promising technology for the next generation of data storage. Since HDS records two-dimensional data pages in three-dimensional storage media, it can achieve ultra-high capacity and extremely fast data transfer rates. However, such a high data density inevitably leads to crosstalk between pixels, resulting in data reading errors. In this paper, a 6:32 sparse modulation code is proposed, and a 2D data page is constructed comprehensively. The experimental results indicate that the 6:32 sparse modulation code can effectively suppress crosstalk between pixels and further enhance the data density of HDS.

Fujian Normal University (CN)
Affordable and clean energy
Openalex Percentile: Top 96%
Phase-change materials and chalcogenides
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