An Inverter-Based Sampling Front-End Achieving >46-dB SFDR at 50-GHz Input

This letter presents a 32-GS/s per-way hierarchical sampling front-end (SFE) for time-interleaved ADCs, featuring both high linearity and energy efficiency with inherent embedded gain from an inverter-based topology. The P/N ratio configuration extends its applicable input common-mode voltage range. Both active and passive extensions improve the bandwidth of the SFE supplied by a core-device voltage. Furthermore, an improved dual-path bootstrapped switch enhances the sampling bandwidth and linearity at 8 GS/s. Fabricated in a 28-nm CMOS process, the inverter-based SFE achieves 30-GHz bandwidth while consuming 49.4 mW from a 0.95-V supply. The measured spurious free dynamic range (SFDR) and signal-to-noise and -distortion ratio (SNDR) at 50-GHz input are 46.9 dB and 36.1 dB, respectively.

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Publication Details

Journal
IEEE Solid-State Circuits Letters
Published
2025-01-01
DOI
https://doi.org/10.1109/lssc.2025.3552520
Citations
1
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
Field-Weighted Citation Impact
0.73

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article

An Inverter-Based Sampling Front-End Achieving >46-dB SFDR at 50-GHz Input

Chi‐Hang Chan, Zhaoyang Wu, Minglei Zhang, Yan Zhu et al.
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Integrated Circuits and Semiconductor Failure Analysis
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article

An Inverter-Based Sampling Front-End Achieving >46-dB SFDR at 50-GHz Input

Chi‐Hang Chan, Zhaoyang Wu, Minglei Zhang, Yan Zhu, Rui P. Martins
article en
1 citations

Abstract

This letter presents a 32-GS/s per-way hierarchical sampling front-end (SFE) for time-interleaved ADCs, featuring both high linearity and energy efficiency with inherent embedded gain from an inverter-based topology. The P/N ratio configuration extends its applicable input common-mode voltage range. Both active and passive extensions improve the bandwidth of the SFE supplied by a core-device voltage. Furthermore, an improved dual-path bootstrapped switch enhances the sampling bandwidth and linearity at 8 GS/s. Fabricated in a 28-nm CMOS process, the inverter-based SFE achieves 30-GHz bandwidth while consuming 49.4 mW from a 0.95-V supply. The measured spurious free dynamic range (SFDR) and signal-to-noise and -distortion ratio (SNDR) at 50-GHz input are 46.9 dB and 36.1 dB, respectively.

IEEE Solid-State Circuits LettersVol. 8
University of Macau (MO), Institute of Microelectronics (CN)
Universidade de Macau, Fundo para o Desenvolvimento das Ciências e da Tecnologia
Affordable and clean energy
Openalex Percentile: Top 30%
Integrated Circuits and Semiconductor Failure Analysis
0.73
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