Compact Single-Stage Input and Output Rail-to-Rail Class AB Buffer Amplifier With an Asymmetric Output Structure

This letter presents a compact single-stage buffer amplifier designed to drive a wide range of capacitive loads (CL). To further reduce power consumption and silicon area compared to previous single-stage rail-to-rail amplifiers, this letter proposes an asymmetric rail-to-rail class AB output structure. To achieve a high slew rate, the proposed amplifier employs positive feedback loops and a dynamic floating node. A prototype chip successfully drove a wide range of CL, from 250 pF to 15 nF, while achieving a fast transient response. The chip was fabricated using a 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m CMOS process.

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Publication Details

Journal
IEEE Solid-State Circuits Letters
Published
2025-01-01
DOI
https://doi.org/10.1109/lssc.2025.3551357
Citations
1
Primary Topic
Advanced Power Amplifier Design
Type
article
Field-Weighted Citation Impact
0.73

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article

Compact Single-Stage Input and Output Rail-to-Rail Class AB Buffer Amplifier With an Asymmetric Output Structure

Young-Ju Oh, Sung‐Wan Hong, Hyeonho Park, Junwon Jeong et al.
1 citations
IEEE Solid-State Circuits Letters
Advanced Power Amplifier Design
0.73
article

Compact Single-Stage Input and Output Rail-to-Rail Class AB Buffer Amplifier With an Asymmetric Output Structure

Young-Ju Oh, Sung‐Wan Hong, Hyeonho Park, Junwon Jeong, Hyun-Woo Jeong, Woong Choi, Jeeyoung Shin
article en
1 citations

Abstract

This letter presents a compact single-stage buffer amplifier designed to drive a wide range of capacitive loads (CL). To further reduce power consumption and silicon area compared to previous single-stage rail-to-rail amplifiers, this letter proposes an asymmetric rail-to-rail class AB output structure. To achieve a high slew rate, the proposed amplifier employs positive feedback loops and a dynamic floating node. A prototype chip successfully drove a wide range of CL, from 250 pF to 15 nF, while achieving a fast transient response. The chip was fabricated using a 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m CMOS process.

IEEE Solid-State Circuits LettersVol. 8
Sogang University (KR), Sookmyung Women's University (KR)
Ministry of Trade, Industry and Energy, Ministry of Science and ICT, South Korea, Samsung
Affordable and clean energy
Openalex Percentile: Top 30%
Advanced Power Amplifier Design
0.73
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Compact Single-Stage Input and Output Rail-to-Rail Class AB Buffer Amplifier With an Asymmetric Output Structure — Young-Ju Oh, Sung‐Wan Hong, et al. · IEEE Solid-State Circuits Letters (2025) | TGRS Research Map | TGRS