Deterministic Magnetization Switching with Controllable Chirality in Single Sperimagnetic NiFeTb Layers

Abstract Field‐free magnetization switching with low critical current density is a fundamental pursuit for spin‐orbit torque (SOT) devices. Here, a novel strategy is provided that utilizes the sperimagnetism of NiFeTb to achieve current‐induced field‐free magnetization switching with high efficiency and controllable chirality. The critical current density required for field‐free magnetization switching is as low as 2.8 × 10 6 A cm −2 , an order of magnitude lower than that in conventional heavy metal‐based magnetic heterostructures. The ultralow critical current density is attributed to the exceptional soft magnetism, the nucleation‐dominant switching characteristic of NiFeTb, and the strong spin Hall effect associated with the large spin‐orbital coupling of Tb 4 f electrons. Notably, the switching chirality can be designed by manipulating the history of the in‐plane magnetic field. The field‐free and chirality‐controlled magnetization switching in NiFeTb is facilitated by the symmetry‐broken sperimagnetic structural arrangement. Utilizing the rich intermediate resistance states and non‐volatility of the device, neural network computation is simulated. The findings reveal sperimagnetic rare‐earth‐transition metal alloys as vital candidates for multifunctional, ultra‐low‐power storage and computing applications.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-03-18
DOI
https://doi.org/10.1002/adfm.202503229
Citations
3
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
3.74

Funders

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article

Deterministic Magnetization Switching with Controllable Chirality in Single Sperimagnetic NiFeTb Layers

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3 citations
Advanced Functional Materials
Magnetic properties of thin films
3.74
article

Deterministic Magnetization Switching with Controllable Chirality in Single Sperimagnetic NiFeTb Layers

Zhaocong Huang, Yongbing Xu, Xinyu Chen, Jinlan Wang, Qingjie Guo, Ruobai Liu, Mingming Tian, Zhongming Zeng, Ya Zhai, Lulu Cao, Ke Xia, Qian Chen, Wen Zhang, Wei Jiang, Fangyuan Zhu, Bin Lu, Zhuoyi Li, Jun Du
article en
3 citations

Abstract

Abstract Field‐free magnetization switching with low critical current density is a fundamental pursuit for spin‐orbit torque (SOT) devices. Here, a novel strategy is provided that utilizes the sperimagnetism of NiFeTb to achieve current‐induced field‐free magnetization switching with high efficiency and controllable chirality. The critical current density required for field‐free magnetization switching is as low as 2.8 × 10 6 A cm −2 , an order of magnitude lower than that in conventional heavy metal‐based magnetic heterostructures. The ultralow critical current density is attributed to the exceptional soft magnetism, the nucleation‐dominant switching characteristic of NiFeTb, and the strong spin Hall effect associated with the large spin‐orbital coupling of Tb 4 f electrons. Notably, the switching chirality can be designed by manipulating the history of the in‐plane magnetic field. The field‐free and chirality‐controlled magnetization switching in NiFeTb is facilitated by the symmetry‐broken sperimagnetic structural arrangement. Utilizing the rich intermediate resistance states and non‐volatility of the device, neural network computation is simulated. The findings reveal sperimagnetic rare‐earth‐transition metal alloys as vital candidates for multifunctional, ultra‐low‐power storage and computing applications.

Advanced Functional MaterialsVol. 35(32)
Northwestern Polytechnical University (CN), Chinese Academy of Sciences (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Shanghai Advanced Research Institute (CN), Southeast University (CN), Nanjing University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 8%
Magnetic properties of thin films
3.74
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