Adaptive Vision Sensor Based on Nonlinear Negative Photoconductivity Behavior

Abstract In‐sensor adaptive visual systems represent a promising technology applicable across various fields. This method significantly enhances image quality while reducing system complexity, thereby holding substantial scientific significance and practical applications. This study emulates a light‐triggered depolarization neuromorphic response utilizing an In 2 O 3 /C8‐BTBT heterojunction transistor device equipped with ion‐gel gating. When the heterojunction device is exposed to UV light, electrons in the In 2 O 3 layer recombine with holes in the C8‐BTBT layer, leading to a rapid decrease in photocurrent and resulting in a significant negative photoresponse. The device is capable of simulating spike‐dependent inhibitory currents and multilevel storage capabilities. Moreover, the proposed device is employed in constructing a UV‐adaptive retina, facilitating in‐sensor adaptive computational imaging by leveraging its unique dependence on UV intensity and temporal characteristics, thereby significantly enhancing the visualization of image details.