Effect of Doping with Praseodymium on the Crystal Structure and Optical Absorption Edge of the TlGaS2 Compound

We have grown single crystals of solid solutions based on the layered compound semiconductor TlGaS2 containing up to 2 mol % praseodymium and characterized them by X-ray diffraction. The optical absorption edge of the TlGaS2〈Pr〉 solid solutions has been studied in the temperature range 100–200 K, and the edge exciton peak position has been determined as a function of temperature for all of the TlGaS2〈Pr〉 compositions studied.