Catalytic-enhanced thermal hydrogen-termination of diamond for electronic applications

In this work we demonstrate a new method to terminate the surface of single crystal (100) diamond with hydrogen using low hydrogen-concentration (5 % H 2 :95 % Ar) forming gas and platinum (Pt) and palladium (Pd) thin films which catalytically enhance the investigated thermal hydrogen termination process. The resultant hydrogen termination is verified by electrical characterization and contact wetting angle measurements. A sheet resistance of the diamond surface as low as 11.3 kΩ/□ is achieved due to transfer doping in air and a contact angle up to 90° is simultaneously achieved as associated with the hydrophobicity of hydrogen-terminated diamond. This work demonstrates a readily accessible processing method to hydrogen terminate the diamond surface to achieve high conductivity without the requirement for a pure hydrogen source or dedicated plasma equipment. • Innovative Hydrogen Termination Method: Catalyst-assisted thermal process for diamond hydrogen termination, eliminating plasma use. • Catalytic Spillover Enhancement: Used Pt and Pd thin films to enhance hydrogen migration, enabling high conductivity on the diamond surface. • Cost-Effective and Accessible: Alternative to high-purity hydrogen methods, making termination accessible without high-vacuum and plasma. • Surface Quality: Achieved hydrogen termination with minimal surface roughness, preserving diamond’s quality for electronic and quantum applications.