High voltage monolithic pixel sensor in 55 nm technology

Abstract The Monolithic Active Pixel Sensors (MAPS) implemented in high-voltage CMOS (HVCMOS) technology are suitable for tracking of high-energy particles in particle physics experiments. To explore performance improvements in smaller technology nodes, a prototype of the next-generation HVCMOS sensor has been done using 55 nm high-voltage technology. This technology offers the benefits of smaller feature size and reduced power consumption.