A Multi-Mode Configurable Physical Unclonable Function Based on RRAM With Adjustable Programmable Voltage

Resistive random access memory (RRAM) presents a promising solution for energy-efficient logic-in-memory (LiM) systems. This paper introduces a Multi-mode Configurable Physical Unclonable Function (MC-PUF) tailored for secure RRAM-based LiM applications, utilizing a conventional one-transistor-one-RRAM (1T1R) array. The MC-PUF operates in multiple modes by modifying the programming voltages of the RRAM, which captures the distinct variations of each RRAM under varying conditions. In weak write mode, the MC-PUF exploits the inherent variations of RRAM by setting the programming voltages to achieve a 50% switching probability, thereby randomly assigning ‘0’ or ‘1’ states. In parallel competition mode, it generates responses by selecting two parallel RRAMs, with one remaining in a high resistance state (HRS) and the other switching to a low resistance state (LRS). This configuration allows the MC-PUF to generate more challenge-response pairs (CRPs) compared to conventional designs, thus enhancing security through increased entropy. The design was validated through simulations using a compact Spice model and the UMC 55 nm CMOS library, as well as on an experimental hardware platform with commercial RRAM chips. Results from both simulations and hardware implementations indicate that the proposed MC-PUF exhibits high reliability, excellent uniqueness, and superior configurability.

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Publication Details

Journal
IEEE Transactions on Nanotechnology
Published
2025-01-01
DOI
https://doi.org/10.1109/tnano.2025.3552433
Citations
4
Primary Topic
Physical Unclonable Functions (PUFs) and Hardware Security
Type
article
Field-Weighted Citation Impact
9.08

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A Multi-Mode Configurable Physical Unclonable Function Based on RRAM With Adjustable Programmable Voltage

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IEEE Transactions on Nanotechnology
Physical Unclonable Functions (PUFs) and Hardware Security
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article

A Multi-Mode Configurable Physical Unclonable Function Based on RRAM With Adjustable Programmable Voltage

Yijun Cui, Weiqiang Liu, Chenghua Wang, Chongyan Gu, Jiang Li
article en
4 citations

Abstract

Resistive random access memory (RRAM) presents a promising solution for energy-efficient logic-in-memory (LiM) systems. This paper introduces a Multi-mode Configurable Physical Unclonable Function (MC-PUF) tailored for secure RRAM-based LiM applications, utilizing a conventional one-transistor-one-RRAM (1T1R) array. The MC-PUF operates in multiple modes by modifying the programming voltages of the RRAM, which captures the distinct variations of each RRAM under varying conditions. In weak write mode, the MC-PUF exploits the inherent variations of RRAM by setting the programming voltages to achieve a 50% switching probability, thereby randomly assigning ‘0’ or ‘1’ states. In parallel competition mode, it generates responses by selecting two parallel RRAMs, with one remaining in a high resistance state (HRS) and the other switching to a low resistance state (LRS). This configuration allows the MC-PUF to generate more challenge-response pairs (CRPs) compared to conventional designs, thus enhancing security through increased entropy. The design was validated through simulations using a compact Spice model and the UMC 55 nm CMOS library, as well as on an experimental hardware platform with commercial RRAM chips. Results from both simulations and hardware implementations indicate that the proposed MC-PUF exhibits high reliability, excellent uniqueness, and superior configurability.

IEEE Transactions on NanotechnologyVol. 24
Queen's University Belfast (GB), Nanjing University of Aeronautics and Astronautics (CN)
National Natural Science Foundation of China, Engineering and Physical Sciences Research Council
Affordable and clean energy
Openalex Percentile: Top 3%
Physical Unclonable Functions (PUFs) and Hardware Security
9.08
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