Corrections to “High-Performance Modulators Employing Organic Electro-Optic Materials on the Silicon Platform”

We apologize for transferring an outdated version of our internal table to the published document [1]. The following entries are to be corrected in Table II: •Row 5 (Strip-WG MZM) ○Column 2: Replace “line rate 110 Gbit/s” by “112 Gbit/s” ○Column 7 and 8: Remove entries at “a” and “UπLa” ○Column 10: Replace “Tg = 185 °C” by “194 °C” •Row 7 (Slot-WG MZM) ○Column 7: Replace “a = 9.3 dB/mm” by “3.9 dB/mm” ○Column 8: Replace “UπLa = 7.4 VdB” by “1.2 VdB” •Row 8 (Strip-WG MZM…) ○Column 1: Replace “Strip-WG MZM (Si/InP hybrid)” by “Slot-WG MZM (EO/InP hybrid)” ○Column 7: Remove entry at “a” •Row 10 (POH IQ-M) ○Column 7 and 8: Remove entries at “a” and “UπLa” •(Last) Row 11 (POH MZM) ○Column 2: Replace “(16%)” by “(19%)” ○Column 5: Replace “UπL = 0.162 Vmm” by “0.12 Vmm” ○Column 7 and 8: Remove entries at “a” and “UπLa”