High-power remote plasma source with alternative gas COF₂ for PECVD chamber dry cleaning

Abstract NF 3 , the current cleaning gas used in the semiconductor industry, has a high global warming product (GWP) of 16 100, necessitating the search for sustainable alternatives with low-GWP. This study investigates the chamber cleaning process using COF 2 , a low-GWP candidate gas, under high-power conditions. Due to the strong C–F bonds in COF 2 , achieving sufficient cleaning rates is challenging and requires high-power. At higher power levels, the increased generation of F radicals effectively removes residual films and contaminants, leading to improved cleaning efficiency. We introduce COF 2 with O 2 chamber cleaning at specific power levels to prevent carbon-based by-products and enhance cleaning efficiency. This approach has potential applicability in environmentally friendly manufacturing processes, even when the gas contains carbon bonds.