Characterization and testing of subsurface metallic microstrip line using scanning microwave techniques

Abstract The highly integrated development of electronic devices poses a major challenge for high-resolution nondestructive analysis inside multilayer structures. In this paper, the microstrip line covered with a silicon nitride dielectric layer is clearly characterized using a near-field microwave imaging system integrated with an atomic force microscopy and a vector network analyzer. Scanning microwave probe not only provides the surface morphology, but also obtains its interfacial properties and structural characteristics. In addition, the influence of the surface dielectric layer is discussed in the nondestructive characterization of the buried structure. This study provides important insights into the nondestructive characterization of microstructures under the dielectric layer, and establishes an important foundation for the reliability verification of microelectronic devices.