A novel lateral superjunction Ga ₂ O ₃ MOSFET with a self-biased accumulation layer for ultra-low specific on-resistance and improved FOM

Abstract In this article, a high-performance enhancement-mode (E-mode) lateral superjunction (SJ) β -Ga 2 O 3 metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a self-biased p-type nickel oxide (NiO) layer was proposed and numerical investigated. The drift region of the proposed lateral SJ Ga 2 O 3 MOSFET includes n-type Ga 2 O 3 , Al 2 O 3 and p-type NiO layers. The electric field distribution and specific on-resistance of the drift region both are greatly improved, due to the compensation effect n-type Ga 2 O 3 and p-type NiO SJ drift layers. Additionally, the p-type NiO layer is self-biased with a voltage of −14.3 V, to form an accumulation layer in the drift region, which further reduces the specific on-resistance ( R on,sp ) of the device. Simulation results indicated that the proposed device achieves a breakdown voltage (BV) of 7000 V and R on,sp of 17.73 mΩ· cm 2 . In contrast, the conventional device with the same drift region length has a BV of 3500 V and R on,sp of 162.58 mΩ cm 2 . The figure of merit values for the proposed and conventional devices were 2.76 GW cm −2 and 75.34 MW cm −2 , respectively, representing a 3565% improvement. The combination of superior device performance and a straightforward manufacturing process presents a promising outlook for the application of the proposed device.