Plasma-enhanced chemical vapor deposition of SiO<sub>2</sub> films at 400 kHz and 100 °C using tetraethyl orthosilicate with oxygen and SiH<sub>4</sub> with nitrous oxide
Abstract This study investigated various properties of SiO 2 films deposited using SiH 4 and tetraethyl orthosilicate (TEOS) at a frequency of 400 kHz in plasma-enhanced chemical vapor deposition (PECVD) at 100 °C. The TEOS-SiO 2 film exhibited a higher refractive index and density than the SiH 4 -SiO 2 film. Electron spin resonance measurements at −180 °C revealed fewer structural defects in TEOS-SiO 2 , while atomic force microscopy showed smoother surface morphology in TEOS-SiO 2 compared to SiH 4 -SiO 2 . These differences are attributed to the surface-mediated growth mechanism of TEOS compared to the gas-phase-dominated reactions of SiH 4 . These results demonstrate that TEOS-PECVD at 400 kHz is a promising technique for forming high-quality SiO 2 films at low temperatures.
Authors
- Takahiro Miyashita
- Hiroyuki Nishinaka (ORCID: https://orcid.org/0000-0003-1878-0765)
- Yutaka Kusuda (ORCID: https://orcid.org/0009-0001-6768-4182)
- Yūki Asai
Institutions
- Kyoto Institute of Technology (JP)
- Kyoto University of Education (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-03-18
- DOI
- https://doi.org/10.35848/1347-4065/adc1d3
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00