Strain and composition engineering of excited-state carrier recombination dynamics in GaAs/GaP and GaAs/AlAs superlattices: insights from time-domain nonadiabatic molecular dynamics simulations
Strain engineering in GaAs/GaP and GaAs/AlAs superlattices enables carrier lifetime tuning from picosecond to nanosecond levels, supporting applications such as photovoltaic cells, photodetectors, and light-emitting diodes.
Authors
- Xinlu Cheng (ORCID: https://orcid.org/0000-0002-2661-556X)
- Hong Zhang (ORCID: https://orcid.org/0000-0003-3098-7988)
- Ping Lu (ORCID: https://orcid.org/0009-0007-7771-3550)
- Yue Tang (ORCID: https://orcid.org/0000-0001-5941-5217)
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Shenzhen University (CN)
- Sichuan University (CN)
- Shenzhen Technology University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ta00296f
- Citations
- 2
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.49