Dielectric Properties of Ferroelectric Domain Walls by Raman Spectroscopy

ABSTRACT A simple and nondestructive method for local characterization of the domain walls properties based on the confocal Raman microscopy and Lyddane−Sachs−Teller relation is proposed. The polarized Raman spectra were measured at polar and nonpolar surfaces of stoichiometric lithium niobate single crystal, and the variations of most high‐frequency spectral lines in the vicinity of 180° domain walls were revealed. The obtained results were then used in generalized Lyddane−Sachs−Teller relation to get insight on the dielectric property variations near the domain walls. The refractive index contrast corresponding to these variations is comparable with the results provided by optical coherence tomography. The new approach can help to improve the methods of domain wall engineering and facilitate the development of novel nanoelectronic and optoelectronic nanoelectronic devices.

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Publication Details

Journal
Journal of Raman Spectroscopy
Published
2025-03-18
DOI
https://doi.org/10.1002/jrs.6795
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Dielectric Properties of Ferroelectric Domain Walls by Raman Spectroscopy

V. Ya. Shur, P. S. Zelenovskiy, A. Gladkikh
Journal of Raman Spectroscopy
Ferroelectric and Piezoelectric Materials
article

Dielectric Properties of Ferroelectric Domain Walls by Raman Spectroscopy

V. Ya. Shur, P. S. Zelenovskiy, A. Gladkikh
article en

Abstract

ABSTRACT A simple and nondestructive method for local characterization of the domain walls properties based on the confocal Raman microscopy and Lyddane−Sachs−Teller relation is proposed. The polarized Raman spectra were measured at polar and nonpolar surfaces of stoichiometric lithium niobate single crystal, and the variations of most high‐frequency spectral lines in the vicinity of 180° domain walls were revealed. The obtained results were then used in generalized Lyddane−Sachs−Teller relation to get insight on the dielectric property variations near the domain walls. The refractive index contrast corresponding to these variations is comparable with the results provided by optical coherence tomography. The new approach can help to improve the methods of domain wall engineering and facilitate the development of novel nanoelectronic and optoelectronic nanoelectronic devices.

Journal of Raman SpectroscopyVol. 56(6)
Ural Federal University (RU)
Ministry of Science and Higher Education of the Russian Federation
Openalex Percentile: Top 97%
Ferroelectric and Piezoelectric Materials
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