The competition between van der Waals and ionic interactions at the SrTiO3/mica heterointerface

Growing a 3D film on a 2D substrate, a process often referred to as quasi-van der Waals (vdW) epitaxy, is generally believed to involve both chemical and vdW interactions at the interface. To date, the competition between chemical and vdW interactions at the interface has yet to be established. In this work, we demonstrate that the chemical activity of deposited species is crucial for determining the structure of the 3D/2D heterointerface. During pulsed laser deposition, the chemical activity of SrTiO3 (STO) can be adjusted by controlling the oxygen partial pressure. Therefore, the relative contributions of chemical and vdW interactions at the STO/mica interface can be tuned. This finding ultimately explains the coexistence of [111] and [001] orientations in STO epitaxy on mica.

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Publication Details

Journal
Applied Physics Letters
Published
2025-03-01
DOI
https://doi.org/10.1063/5.0260844
Citations
2
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
1.04

Funders

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article

The competition between van der Waals and ionic interactions at the SrTiO3/mica heterointerface

Renhong Liang, Shanming Ke
2 citations
Applied Physics Letters
Electronic and Structural Properties of Oxides
1.04
article

The competition between van der Waals and ionic interactions at the SrTiO3/mica heterointerface

Renhong Liang, Shanming Ke
article en
2 citations

Abstract

Growing a 3D film on a 2D substrate, a process often referred to as quasi-van der Waals (vdW) epitaxy, is generally believed to involve both chemical and vdW interactions at the interface. To date, the competition between chemical and vdW interactions at the interface has yet to be established. In this work, we demonstrate that the chemical activity of deposited species is crucial for determining the structure of the 3D/2D heterointerface. During pulsed laser deposition, the chemical activity of SrTiO3 (STO) can be adjusted by controlling the oxygen partial pressure. Therefore, the relative contributions of chemical and vdW interactions at the STO/mica interface can be tuned. This finding ultimately explains the coexistence of [111] and [001] orientations in STO epitaxy on mica.

Applied Physics LettersVol. 126(11)
Guangzhou University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 27%
Electronic and Structural Properties of Oxides
1.04
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