Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Authors

Seiji Mita (ORCID: https://orcid.org/0009-0002-8312-107X)
Shigefusa F. Chichibu (ORCID: https://orcid.org/0000-0001-9558-1642)
Kohei K. Shima (ORCID: https://orcid.org/0000-0003-0967-141X)
Baxter Moody (ORCID: https://orcid.org/0009-0004-1766-3924)
Shoji Ishibashi (ORCID: https://orcid.org/0000-0002-4896-3530)
Yoshinao Kumagai (ORCID: https://orcid.org/0000-0001-8475-9468)
Zlatko Sitar (ORCID: https://orcid.org/0000-0002-7385-0837)
Akira Uedono (ORCID: https://orcid.org/0000-0001-6224-4869)
Ramón Collazo (ORCID: https://orcid.org/0000-0002-5229-3824)
K Kikuchi

Institutions

North Carolina State University (US)
University of Tsukuba (JP)
Tohoku University (JP)
Adroit Materials (United States) (US)
National Institute of Advanced Industrial Science and Technology (JP)
Tokyo University of Agriculture and Technology (JP)

Publication Details

Journal: Applied Physics Letters
Published: 2025-03-01
DOI: https://doi.org/10.1063/5.0252149
Citations: 4
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 5.03

Funders

Ministry of Education, Culture, Sports, Science and Technology
Japan Society for the Promotion of Science

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article

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Seiji Mita, Shigefusa F. Chichibu, Kohei K. Shima, Baxter Moody et al.

Mar 1, 2025

4 citations

Applied Physics Letters

GaN-based semiconductor devices and materials

5.03

article

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Seiji Mita, Shigefusa F. Chichibu, Kohei K. Shima, Baxter Moody, Shoji Ishibashi, Yoshinao Kumagai, Zlatko Sitar, Akira Uedono, Ramón Collazo, K Kikuchi

March 1, 2025article en

4 citations

Abstract

No abstract available for this paper.

Applied Physics LettersVol. 126(11)

North Carolina State University (US), University of Tsukuba (JP), Tohoku University (JP), Adroit Materials (United States) (US), National Institute of Advanced Industrial Science and Technology (JP), Tokyo University of Agriculture and Technology (JP)

Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science

Openalex Percentile: Top 5%

GaN-based semiconductor devices and materials

5.03

DOI Source OpenAlex

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Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy — Seiji Mita, Shigefusa F. Chichibu, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS