A DFT study on the surface reaction mechanisms on 4H-SiC surfaces with gaseous species from the MTS-H<sub>2</sub> gas-phase system
Surface reaction mechanisms of species from the MTS-H 2 gas-phase system with 4H-SiC surface sites.
Authors
- Bing Gao (ORCID: https://orcid.org/0000-0003-0093-7269)
- Yan Zhao (ORCID: https://orcid.org/0000-0002-1234-4455)
- Botao Song (ORCID: https://orcid.org/0000-0003-3071-543X)
- Sheng Liu (ORCID: https://orcid.org/0000-0003-2731-9591)
- Fang Dong
Institutions
- Wuhan University (CN)
Publication Details
- Journal
- New Journal of Chemistry
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4nj05268d
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China