Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS<sub>2</sub> Transistors

Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce polymeric photoresist contamination to 2-D materials, leading to a large uncertainty in their electrical property. In this work, we demonstrate a novel fabrication method using gold as a mask for patterning and etching, which protects 2-D materials from contamination of polymeric photoresists. This technique enables the fabrication of clean monolayer MoS2 transistors with Ohmic contacts. MoS2 devices was mass-produced using both traditional photo-lithography (TPL) and gold mask lithography (GML). Statistics (~200 devices) shows that MoS2 devices produced by TPL vary in electrical properties by three orders of magnitude, while those fabricated by GML are highly reproducible with the conductivity variance within one order of magnitude.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-03-17
DOI
https://doi.org/10.1109/ted.2025.3547294
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS2 Transistors

Seyed Saleh Mousavi Khaleghi, R. Kudrawiec, Zhengfang Fan, Rui Yang et al.
IEEE Transactions on Electron Devices
2D Materials and Applications
article

Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS2 Transistors

Seyed Saleh Mousavi Khaleghi, R. Kudrawiec, Zhengfang Fan, Rui Yang, Jianyong Wei, Zhijuan Su, Yaping Dan, Yumeng Liu, Zhentao Lian, Shuwen Guo, Hao Wei, Yizhuo Wang
article en

Abstract

Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce polymeric photoresist contamination to 2-D materials, leading to a large uncertainty in their electrical property. In this work, we demonstrate a novel fabrication method using gold as a mask for patterning and etching, which protects 2-D materials from contamination of polymeric photoresists. This technique enables the fabrication of clean monolayer MoS2 transistors with Ohmic contacts. MoS2 devices was mass-produced using both traditional photo-lithography (TPL) and gold mask lithography (GML). Statistics (~200 devices) shows that MoS2 devices produced by TPL vary in electrical properties by three orders of magnitude, while those fabricated by GML are highly reproducible with the conductivity variance within one order of magnitude.

IEEE Transactions on Electron DevicesVol. 72(4)
Wrocław University of Science and Technology (PL), Shanghai Polytechnic University (CN), Shanghai Jiao Tong University (CN), AGH University of Krakow (PL)
National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality
Openalex Percentile: Top 97%
2D Materials and Applications
DOISourceOpenAlex
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Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS<sub>2</sub> Transistors — Seyed Saleh Mousavi Khaleghi, R. Kudrawiec, et al. · IEEE Transactions on Electron Devices (2025) | TGRS Research Map | TGRS