Conducting oxide surface engineering enables the growth of a low-defect carbon nitride film for unbiased photoelectrochemical water splitting
Surface etching to expose (211) of SnO 2 : F (FTO) led to uniform synthesis of low-defect CN film, which produces a state-of-the-art photovoltage of 0.64 V and excellent biased and unbiased photoelectrochemical water splitting performances.
Authors
- Suqin Wu (ORCID: https://orcid.org/0000-0002-0994-402X)
- Menny Shalom (ORCID: https://orcid.org/0000-0002-4506-4177)
- Guiming Peng (ORCID: https://orcid.org/0000-0001-5139-1310)
- Shuai Xiong
- Fengmei Zhi
- Lai Chen (ORCID: https://orcid.org/0000-0002-8226-3140)
- He Mao (ORCID: https://orcid.org/0000-0002-6345-0047)
- Wenjie Deng (ORCID: https://orcid.org/0000-0002-5615-0353)
- S.B. Xiong (ORCID: https://orcid.org/0009-0003-3450-0572)
Institutions
- Ben-Gurion University of the Negev (IL)
- Ministry of Education (PT)
- Jiangxi Normal University (CN)
Publication Details
- Journal
- Inorganic Chemistry Frontiers
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5qi00428d
- Citations
- 3
- Primary Topic
- Advanced Photocatalysis Techniques
- Type
- article
- Field-Weighted Citation Impact
- 1.09