Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

We demonstrate the application of atom probe tomography for assessing the crystalline orientation of nanoscale semiconductor structures via the analysis of charge state ratio maps in the detector space. The experimental realization is carried out in the context of adventitious cone-shaped domains present in AlGaN quantum dot superlattices. The cone-shaped domains, which emerge from shallow pits generated in AlN and propagate through the superlattices, are shown to exhibit small misorientation angles of their crystalline 〈0001〉 poles. The results of the atom probe tomography analysis are confirmed by convergent beam electron diffraction measurements. The use of this methodology adds another layer to the application of this technique to semiconductor nanoscale systems, providing not only compositional maps but also information on the crystallographic orientation.

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Publication Details

Journal
Applied Physics Letters
Published
2025-03-01
DOI
https://doi.org/10.1063/5.0242659
Primary Topic
Advanced Materials Characterization Techniques
Type
article
Field-Weighted Citation Impact
0.00

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article

Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

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Applied Physics Letters
Advanced Materials Characterization Techniques
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Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

Lorenzo Rigutti, Anjali Harikumar, Samba Ndiaye, Audrey Jannaud, E. Monroy, J. Cañas, Jean‐Luc Rouvière, Adeline Grenier
article en

Abstract

We demonstrate the application of atom probe tomography for assessing the crystalline orientation of nanoscale semiconductor structures via the analysis of charge state ratio maps in the detector space. The experimental realization is carried out in the context of adventitious cone-shaped domains present in AlGaN quantum dot superlattices. The cone-shaped domains, which emerge from shallow pits generated in AlN and propagate through the superlattices, are shown to exhibit small misorientation angles of their crystalline 〈0001〉 poles. The results of the atom probe tomography analysis are confirmed by convergent beam electron diffraction measurements. The use of this methodology adds another layer to the application of this technique to semiconductor nanoscale systems, providing not only compositional maps but also information on the crystallographic orientation.

Applied Physics LettersVol. 126(11)
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Normandie Université (FR), Groupe de Physique des Matériaux (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université de Rouen Normandie (FR), Université Grenoble Alpes (FR)
Agence Nationale de la Recherche
Openalex Percentile: Top 95%
Advanced Materials Characterization Techniques
DOIOpen Access PDFOpenAlex
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