Thermal Effects on the Electrical Performance of Multilayer Graphene/Silicon Schottky Diodes

Abstract The graphene-silicon junction (GSJ), as a 2D/3D hybrid junction, has recently received great attention due to the distinctive properties of graphene and thus it has become of great importance in the manufacture and application of optoelectronic devices (Schottky diode). In this study, samples of graphene and silicon were initially manufactured using a layer of graphene and negative-type silicon (n-type) and samples were manufactured containing two and three layers of graphene. The structural properties of the samples were studied using (SEM), Raman spectroscopy, and (AFM). The results indicated a high level of precision in producing the samples, using high-quality graphene sheets, and ensuring strong adhesion to the substrate or its coating. It was observed that with higher temperature, there was an increase in both the reverse and forward currents in the samples. The rectiMication factor was calculated for all samples, and it was found that its highest value was for the sample containing two layers of graphene, and it was found that this factor decreases with increasing temperature. Important parameters were also calculated, such as the Schottky barrier height (SBH), the Richardson constant (RC), the series resistance (SR), and the ideality factor (IF). It was found that as the number of layers increases (at a certain temperature), The Schottky barrier height diminishes, and the Richardson constant escalates with increasing temperature and layer count, while the series resistance and ideality factor decline.