Memory resistor based on GaAs 2D-bilayers
Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D–2D tunneling regime causes a negative differential resistance. The negative differential resistance leads to a hysteresis when the device is operated in a current driven mode, allowing a bilayer system to function as a volatile memory resistor.
Authors
- Christian Reichl (ORCID: https://orcid.org/0000-0002-8078-9544)
- Zijin Lei (ORCID: https://orcid.org/0000-0002-1420-320X)
- Christian Marty (ORCID: https://orcid.org/0000-0002-1579-7812)
- W. Dietsche
- W. Wegscheider (ORCID: https://orcid.org/0000-0002-2138-5558)
- Saverio Silletta
Institutions
- ETH Zurich (CH)
Publication Details
- Journal
- AIP Advances
- Published
- 2025-03-01
- DOI
- https://doi.org/10.1063/5.0254603
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
- National Center of Competence in Research Quantum Science and Technology