Study of Resonant Light Absorption in Hexagonally Ordered InAs NWs

Indium arsenide (InAs) nanowires (NWs) have recently attracted the attention of researchers as promising structures for creating nanoelectronic and photonic devices. To improve the efficiency of devices based on them, it is necessary to take into account their geometric features, which, in particular, affects the processes of light absorption. In this work, we numerically simulated light capture by an array of InAs nanowires depending on its geometric parameters using the Comsol Multiphysics software package. Ordered arrays of InAs NWs on a Si substrate were synthesized by molecular beam epitaxy in combination with microsphere lithography. Optical reflectance spectra of epitaxial InAs NW arrays on the silicon substrate were obtained for the range of 0.5–2.5 μm. In the case of hexagonally ordered NW arrays, the spectrum exhibits resonant behavior, which is consistent with the results of numerical calculations.