Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

Ion beam technology is an excellent tool for changing and investigating the structural and surface properties of crystals. In this paper, the possibility of modifying the surface of a thin LiF film under irradiation with low-energy Cs ions with an energy of 1 keV using the SRIM software method is investigated. The results of the study show that the average range of cesium ions is 51 Å, and the average surface binding energy is 2.8 eV. Due to the transfer and distribution of the energy of bombarding ions to the atomic lattice and as a result of the displacement of the lattice atoms from their initial positions, it is possible to obtain the value of displacement defects. The defect formation profile was investigated depending on DPA, which implies that the maximum peaks of defect displacement for LiF are at a crystal depth of 16 Å from the surface.

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Publication Details

Journal
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques
Published
2024-12-01
DOI
https://doi.org/10.1134/s1027451024702215
Citations
2
Primary Topic
Ion-surface interactions and analysis
Type
article
Field-Weighted Citation Impact
0.75
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article

Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

Zafar Iskandarov, Dilmurod Saidov, Odiljon E. ABDURAKHMONOV, N. M. Nazarova et al.
2 citations
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques
Ion-surface interactions and analysis
0.75
article

Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

Zafar Iskandarov, Dilmurod Saidov, Odiljon E. ABDURAKHMONOV, N. M. Nazarova, O. A. Abdulkhaev, Alisher Kakhramonov, А. S. Komolov, Б. Э. Эгамбердиев, Sokhib Islamov, И. А. Пронин, М. K. Kаrimov, K. A. Samiev, Utkirjon Sharopov, М. К. Курбанов
article en
2 citations

Abstract

Ion beam technology is an excellent tool for changing and investigating the structural and surface properties of crystals. In this paper, the possibility of modifying the surface of a thin LiF film under irradiation with low-energy Cs ions with an energy of 1 keV using the SRIM software method is investigated. The results of the study show that the average range of cesium ions is 51 Å, and the average surface binding energy is 2.8 eV. Due to the transfer and distribution of the energy of bombarding ions to the atomic lattice and as a result of the displacement of the lattice atoms from their initial positions, it is possible to obtain the value of displacement defects. The defect formation profile was investigated depending on DPA, which implies that the maximum peaks of defect displacement for LiF are at a crystal depth of 16 Å from the surface.

Journal of Surface Investigation X-ray Synchrotron and Neutron TechniquesVol. 18(S1)
Penza State University (RU), Academy of Sciences Republic of Uzbekistan (UZ), Tashkent State Agrarian University (UZ), Urgench State University (UZ), St Petersburg University (RU), Bukhara State University (UZ), Tashkent Chemical-Technological Institute (UZ)
Openalex Percentile: Top 30%
Ion-surface interactions and analysis
0.75
DOISourceOpenAlex
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