Analysis of bias voltage's effect on triple barrier of gallium nitride/aluminum gallium nitride quantum well

At room temperature, we have simulated resonance tunneling currents in a (GaN/AlX Ga1−XN) quantum well where electrons have a lower energy than the potential of the height barrier (Vb) and we have determined that resonance tunneling current density (J0) is dependent on aluminum mole fractions at (x= 55%, 60%, and 65%) in (AlxGa1-xN) barrier regions for number of barriers (N=3) and the well width equals the barrier width (𝐿𝐿𝑎𝑎= 𝐿𝐿𝑏𝑏 =1.27) nm with a bias voltage (Vbias) is applied. The MathCad2001 application provides a simple and accurate method for determining the solution. It is observed that the transmission probability gradually decreases when the bias voltage is increased. Furthermore, the energy of the (E1) growths with high mole fractions of (Al) in the system Al 0.14 eV for x =0.1 to 0.51 eV for x =0.5 in (GaN/ N) superlattice structure. Such quantum wells could be used for laser diodes, biological sensors, and optical storage quantum wells based on our results.