Surface versus bulk: behavior of photoexcited charge carriers in GeS

Abstract Germanium sulfide (GeS) is a 2D semiconductor with potential for high-speed optoelectronics and photovoltaics due to its near-infrared band gap and high mobility of optically excited charge carriers. Here, we use time-resolved THz spectroscopy to investigate the differences in ultrafast carrier dynamics in GeS following near-band gap photoexcitation (1.55 eV), which penetrates deep into the multilayer GeS, and excitation with above-band gap photon energy (3.1 eV), which is absorbed within a sub-20 nm surface layer. We find that the photoexcited carriers in the bulk have significantly longer lifetimes and higher mobility, as they are less impacted by trap states that affect carrier behavior in the surface layer. These insights are important for designing GeS-based photodetectors, solar energy conversion devices, and sensors that leverage the sensitivity of surface-layer photoexcited carriers to trap states.