Achieving high performance ultra-broadband near-infrared emission through a multi-site occupancy and energy transfer strategy for NIR LED applications

A novel LaMgGa 11 O 19 :Cr 3+ ,Yb 3+ near-infrared broadband phosphor with high performance has been designed via a lattice occupation and energy transfer strategy. The application of the above phosphors in the LED field was also demonstrated.

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Publication Details

Journal
Inorganic Chemistry Frontiers
Published
2025-01-01
DOI
https://doi.org/10.1039/d5qi00215j
Citations
8
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
10.06
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article

Achieving high performance ultra-broadband near-infrared emission through a multi-site occupancy and energy transfer strategy for NIR LED applications

Yongying Chen, Мaxim S. Моlokeev, Zixi Chen, Xiubing Liang et al.
8 citations
Inorganic Chemistry Frontiers
GaN-based semiconductor devices and materials
10.06
article

Achieving high performance ultra-broadband near-infrared emission through a multi-site occupancy and energy transfer strategy for NIR LED applications

Yongying Chen, Мaxim S. Моlokeev, Zixi Chen, Xiubing Liang, Bingfu Lei, Haoran Zhang, Na Li, Xuejie Zhang, Mingkai Wei, Wei Li
article en
8 citations

Abstract

A novel LaMgGa 11 O 19 :Cr 3+ ,Yb 3+ near-infrared broadband phosphor with high performance has been designed via a lattice occupation and energy transfer strategy. The application of the above phosphors in the LED field was also demonstrated.

Inorganic Chemistry FrontiersVol. 12(11)
South China Agricultural University (CN), Institute of Physics (RU)
Openalex Percentile: Top 2%
GaN-based semiconductor devices and materials
10.06
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