Advanced interfacial charge carrier transport enabling the improvement of open-circuit voltage in Sb<sub>2</sub>Se<sub>3</sub> solar cells
The incorporation of MoSe 2 forms a potential barrier at the back-contact interface, enhancing interfacial charge transport in Sb 2 Se 3 solar cells. Increased current flow and reduced carrier recombination enable the improvement of open-circuit voltage.
Authors
- Kee‐Jeong Yang (ORCID: https://orcid.org/0000-0002-3421-7959)
- Jin‐Kyu Kang (ORCID: https://orcid.org/0000-0002-6324-5174)
- Jaebaek Lee (ORCID: https://orcid.org/0000-0003-2491-5021)
- William Jo (ORCID: https://orcid.org/0000-0003-4359-9159)
- Shi‐Joon Sung (ORCID: https://orcid.org/0000-0002-9867-7612)
- Van‐Quy Hoang (ORCID: https://orcid.org/0009-0005-3558-5066)
- Dae‐Hwan Kim (ORCID: https://orcid.org/0000-0002-8580-1629)
- Geumha Lim
Institutions
- Ewha Womans University (KR)
- Daegu Gyeongbuk Institute of Science and Technology (KR)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ta00683j
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Research Foundation
- Ministry of Trade, Industry and Energy
- Korea Institute for Advancement of Technology
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea