High-performance UV detector based on freestanding AlGaN film by electrochemical etching technology
Ultraviolet (UV) photodetector (PD) is a device that converts optical signal into electrical signal, serving as a critical component in optoelectronic systems. Due to the leakage effect caused by defects of substrate and buffer layer, the traditional III-nitride semiconductors material UV PDs usually have a large dark current, which seriously restricts the performance of the UV PDs. Herein, freestanding Al<sub>0.1</sub>Ga<sub>0.9</sub>N UV PD was prepared by electrochemical (EC) etching technology. Based on the freestanding Al<sub>0.1</sub>Ga<sub>0.9</sub>N UV detector, the photoelectric performance was charactered. The freestanding Al<sub>0.1</sub>Ga<sub>0.9</sub>N UV PD shows a low dark current below of 1 nA owing to the removing of redundant buffer layer, and exhibits a high responsivity of 0.61 A/W, a high detectivity of 4.1 × 10<sup>12</sup> Jones. The time response demonstrates that the rise time and decay time of the Al<sub>0.1</sub>Ga<sub>0.9</sub>N UV PD are merely 0.291 and 0.007 s. The Al<sub>0.1</sub>Ga<sub>0.9</sub>N PD demonstrates a stable and rapid response time at 325 nm under a low bias of 2 V. This research offers a method for the fabrication and transfer of Al<sub>0.1</sub>Ga<sub>0.9</sub>N UV PD, facilitating the development of novel functional devices, including AlGaN heterogeneously integrated devices and flexible devices.
Authors
- Yuqing Yang (ORCID: https://orcid.org/0009-0006-9785-0504)
- Lu Zhang (ORCID: https://orcid.org/0000-0002-4933-6889)
- Xingfu Wang
- Shuanghong Wu
Institutions
- University of Electronic Science and Technology of China (CN)
- South China Normal University (CN)
Publication Details
- Published
- 2025-03-17
- DOI
- https://doi.org/10.1117/12.3061846
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00