Exploring structure and thermoelectric properties of p-type Ge<sub>1−<i>x</i></sub>In<sub><i>x</i></sub>Sb<sub>4</sub>Te<sub>7</sub> compounds
We determined that GeSb 4 Te 7 -based compounds exhibit site-occupational disorder of Ge/Sb cations and that In-doping significantly lowers the thermal conductivity, enhances the Seebeck coefficient, and improves the power factor of pristine GeSb 4 Te 7 .
Authors
- Shao‐Bo Mi (ORCID: https://orcid.org/0000-0001-5711-850X)
- Weiwei Meng (ORCID: https://orcid.org/0000-0002-1838-049X)
- Yongli Liu (ORCID: https://orcid.org/0000-0002-8594-702X)
- Zhang Hu (ORCID: https://orcid.org/0000-0003-2740-9781)
- Weiping Tong (ORCID: https://orcid.org/0000-0001-9052-0867)
- Lu Lu (ORCID: https://orcid.org/0000-0001-7812-7659)
- Peng Li (ORCID: https://orcid.org/0000-0002-3434-6339)
- Chuanlin Zhang (ORCID: https://orcid.org/0000-0001-6052-1682)
- Wenpeng Jia
Institutions
- Foshan University (CN)
- South China Normal University (CN)
- Ji Hua Laboratory (CN)
- Shaanxi Normal University (CN)
- Northeastern University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00078e
- Citations
- 1
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- National Natural Science Foundation of China