Telecom wavelength quantum dots interfaced with silicon-nitride circuits via photonic wire bonding

Abstract Photonic integrated circuits find applications in classical and quantum communication, computing and sensing. For ideal performance, efforts are made to effectively combine different platforms to benefit from their respective strengths. Here, direct laser written photonic wire bonds are employed to interface triggered sources of quantum light, based on semiconductor quantum dots embedded into etched microlenses, with low-loss silicon-nitride photonics. Single photons at telecom wavelengths are generated by In(Ga)As quantum dots which are then funneled into a silicon-nitride chip containing single-mode waveguides and beamsplitters. The second-order correlation function of g (2) (0) = 0.11 ± 0.02, measured via the on-chip beamsplitter, clearly demonstrates the transfer of single photons into the silicon-nitride platform. The photonic wire bonds funnel on average 27.9 ± 8.0% of the bare microlens emission (NA = 0.6) into the silicon-nitride-based photonic integrated circuit even at cryogenic temperatures. This opens the route for the effective future up-scaling of circuitry complexity based on the use of multiple different platforms.