2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis of 2D nonlayered high-κ insulators is currently limited by uncontrolled isotropic three-dimensional growth, hampering the achievement of simultaneous high dielectric constants and low trap densities for small film thicknesses. Herein, we show a 2D edge-seeded heteroepitaxial strategy to synthesize ultrathin nonlayered 2D CaNb<sub>2</sub>O<sub>6</sub> nanosheets by chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent dielectric constant (~ 16) and breakdown field strength up to ~ 12 MV cm<sup>-1</sup>. The MoS<sub>2</sub>/CaNb<sub>2</sub>O<sub>6</sub> FETs exhibit an on/off ratio of over ~ 10<sup>7</sup>, a subthreshold swing down to 61 mV/dec and a negligible hysteresis. This work suggests a universal 2D edge-seeded heteroepitaxy and slow kinetic strategy for the scalable growth of 2D nonlayered dielectric and demonstrates 2D CaNb<sub>2</sub>O<sub>6</sub> nanosheets as promising dielectrics for facilitating 2D electronic applications.

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Publication Details

Journal
Nature Communications
Published
2025-03-16
DOI
https://doi.org/10.1038/s41467-025-57773-y
Citations
15
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
10.96
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article

2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

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15 citations
Nature Communications
Semiconductor materials and devices
10.96
article

2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

Tulai Sun, Yu Jia, Yihan Zhu, Xilong Zhou, Xiulian Fan, Weihan Li, Keji Lai, Zejuan Zhang, Yu Zhou, Peng Zheng, Bin Deng, Jiali Yi, Juan Xia, Guangcheng Wu, Zenghui Wang, Anlian Pan, Cheng Li, Dong Li, Jian Zhou, Cong Zhou
article en
15 citations

Abstract

The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis of 2D nonlayered high-κ insulators is currently limited by uncontrolled isotropic three-dimensional growth, hampering the achievement of simultaneous high dielectric constants and low trap densities for small film thicknesses. Herein, we show a 2D edge-seeded heteroepitaxial strategy to synthesize ultrathin nonlayered 2D CaNb<sub>2</sub>O<sub>6</sub> nanosheets by chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent dielectric constant (~ 16) and breakdown field strength up to ~ 12 MV cm<sup>-1</sup>. The MoS<sub>2</sub>/CaNb<sub>2</sub>O<sub>6</sub> FETs exhibit an on/off ratio of over ~ 10<sup>7</sup>, a subthreshold swing down to 61 mV/dec and a negligible hysteresis. This work suggests a universal 2D edge-seeded heteroepitaxy and slow kinetic strategy for the scalable growth of 2D nonlayered dielectric and demonstrates 2D CaNb<sub>2</sub>O<sub>6</sub> nanosheets as promising dielectrics for facilitating 2D electronic applications.

Nature CommunicationsVol. 16(1)
Western University (CA), Central South University (CN), University of Electronic Science and Technology of China (CN), Hunan University (CN), Hunan Normal University (CN), Changsha Normal University (CN), Zhejiang University of Technology (CN), The University of Texas at Austin (US), Xi'an Jiaotong University (CN)
Openalex Percentile: Top 1%
Semiconductor materials and devices
10.96
DOIOpen Access PDFOpenAlex
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