Thickness-induced metal–semiconductor transition in LaH<sub>2</sub> epitaxial thin films grown by reactive rf magnetron sputtering
LaH 2 epitaxial thin films were grown for the first time by reactive rf-magnetron sputtering, demonstrating a thickness-induced metal–semiconductor transition.
Authors
- Satoru Miyazaki
- Hideyuki Kawasoko (ORCID: https://orcid.org/0000-0001-9069-3784)
- Tomoteru Fukumura (ORCID: https://orcid.org/0000-0002-8957-3520)
- S. Uramoto
Institutions
- Tohoku University (JP)
- Japan Science and Technology Agency (JP)
- Advanced Institute of Materials Science (JP)
- Tokyo Metropolitan University (JP)
Publication Details
- Journal
- RSC Applied Interfaces
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4lf00367e
- Primary Topic
- Quantum, superfluid, helium dynamics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Japan Society for the Promotion of Science