SiO2 atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation

Recent research on area-selective deposition (ASD) has begun to expand beyond ASD of one material on two different surfaces (i.e., a two-color substrate) to explore multicolor substrates and multimaterial ASD processes. This study introduces molybdenum (Mo) metal and polypyrrole (PPy) dual-material ASD by employing the dual-functionality of molybdenum hexafluoride (MoF6). Mo atomic layer deposition, using MoF6 and silane (1 wt. % SiH4 in Ar), selectively deposits Mo on hydrogen-terminated silicon (Si—H) vs hydroxylated SiO2 (SiO2—OH), while concurrently forming fluorine-passivated SiO2 (SiO2—F). We find that subsequent PPy oxidative chemical vapor deposition, using pyrrole and antimony pentachloride (SbCl5), is suppressed on SiO2—F, as confirmed by x-ray photoelectron spectroscopy, cross-sectional scanning electron microscopy, and time-of-flight secondary ion spectrometry analyses. This inhibitory effect enables the formation of self-aligned, colocalized Mo/PPy nanostructures on Si—H vs SiO2—OH via a sequential integration of two distinct deposition processes: (1) Mo ASD on Si—H vs SiO2—OH and (2) PPy ASD on Mo vs SiO2—F. The stability of fluorine-passivation on SiO2—F in air is further examined. Importantly, we also demonstrate methods to successfully remove the surface passivation (i.e., rehydroxylation of SiO2—F), suggesting the potential for additional ASD on reactivated SiO2 using PPy ASD as a sacrificial mask layer.

Authors

Institutions

Publication Details

Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Published
2025-03-14
DOI
https://doi.org/10.1116/6.0004298
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

SiO2 atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation

Hwan Oh, N Carroll, Gregory N. Parsons, Yujin Jang et al.
2 citations
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Semiconductor materials and devices
1.46
article

SiO2 atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation

Hwan Oh, N Carroll, Gregory N. Parsons, Yujin Jang, Hyuenwoo Yang
article en
2 citations

Abstract

Recent research on area-selective deposition (ASD) has begun to expand beyond ASD of one material on two different surfaces (i.e., a two-color substrate) to explore multicolor substrates and multimaterial ASD processes. This study introduces molybdenum (Mo) metal and polypyrrole (PPy) dual-material ASD by employing the dual-functionality of molybdenum hexafluoride (MoF6). Mo atomic layer deposition, using MoF6 and silane (1 wt. % SiH4 in Ar), selectively deposits Mo on hydrogen-terminated silicon (Si—H) vs hydroxylated SiO2 (SiO2—OH), while concurrently forming fluorine-passivated SiO2 (SiO2—F). We find that subsequent PPy oxidative chemical vapor deposition, using pyrrole and antimony pentachloride (SbCl5), is suppressed on SiO2—F, as confirmed by x-ray photoelectron spectroscopy, cross-sectional scanning electron microscopy, and time-of-flight secondary ion spectrometry analyses. This inhibitory effect enables the formation of self-aligned, colocalized Mo/PPy nanostructures on Si—H vs SiO2—OH via a sequential integration of two distinct deposition processes: (1) Mo ASD on Si—H vs SiO2—OH and (2) PPy ASD on Mo vs SiO2—F. The stability of fluorine-passivation on SiO2—F in air is further examined. Importantly, we also demonstrate methods to successfully remove the surface passivation (i.e., rehydroxylation of SiO2—F), suggesting the potential for additional ASD on reactivated SiO2 using PPy ASD as a sacrificial mask layer.

Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsVol. 43(3)
North Carolina State University (US)
Semiconductor Research Corporation
Openalex Percentile: Top 19%
Semiconductor materials and devices
1.46
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

SiO2 atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation — Hwan Oh, N Carroll, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2025) | TGRS Research Map | TGRS