Single-Event Upset Laser Testing of Various SRAM Resources of a 7-nm FinFET System-on-Chip and Correlation With Heavy Ion Data
We present the single-event upset (SEU) laser testing of different static random access memory (SRAM) resources of a 7-nm fin field-effect transistor (FinFET) programmable system-on-chip (SoC). The results provide original insights into the physical organization of the device, and testing challenges are discussed. Multiple-cell upsets (MCUs) are discussed together with Monte Carlo simulation results. Correlation with heavy ion data is presented and discussed.
Authors
- V. Pouget (ORCID: https://orcid.org/0000-0001-6126-6708)
- A. Urena
- J. Boch (ORCID: https://orcid.org/0000-0002-5660-7501)
- G. Hubert (ORCID: https://orcid.org/0000-0002-3537-9642)
- L. Artola (ORCID: https://orcid.org/0000-0003-0730-7518)
- Florent Manni (ORCID: https://orcid.org/0009-0003-1841-7381)
- Arnaud Dufour (ORCID: https://orcid.org/0000-0002-7625-7510)
- Salma Achaq
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Montpellier (FR)
- Centre National d'Études Spatiales (FR)
- Office National d'Études et de Recherches Aérospatiales (FR)
- Institut d'Électronique et des Systèmes (FR)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-03-14
- DOI
- https://doi.org/10.1109/tns.2025.3551550
- Citations
- 3
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 1.46