A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier

Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.25~\mu $ </tex-math></inline-formula>m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-03-14
DOI
https://doi.org/10.1109/lmwt.2025.3546234
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26
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article

A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier

Xiao‐Yu Hu, Xinyu Liu, Xinyu Liu, Wei Ke et al.
1 citations
IEEE Microwave and Wireless Technology Letters
GaN-based semiconductor devices and materials
1.26
article

A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier

Xiao‐Yu Hu, Xinyu Liu, Xinyu Liu, Wei Ke, Weijun Luo, Xiangcong Zhai, Chunyue Bo
article en
1 citations

Abstract

Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.25~\mu $ </tex-math></inline-formula>m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).

IEEE Microwave and Wireless Technology LettersVol. 35(5)
Chinese Academy of Sciences (CN), Institute of Microelectronics (CN)
Affordable and clean energy
Openalex Percentile: Top 23%
GaN-based semiconductor devices and materials
1.26
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