Influence of Al doping on NiO thin films for NH<sub>3</sub> gas sensing of low PPM concentration
Abstract We present a study on aluminum-doped nickel oxide nanostructured thin films synthesized via spray pyrolysis for ammonia gas sensing applications. Structural analysis confirms the polycrystalline nature of NiO, with the most intense diffraction peak along the (111) plane. Al doping induces variations in surface roughness and optical bandgap, as evidenced by morphological and optical studies. The presence of defects, including oxygen and nickel vacancies, is confirmed through room-temperature photoluminescence and Raman spectroscopy, with x-ray photoelectron spectroscopy further validating an increase in defect concentration upon doping. Gas sensing measurements demonstrate sensor responses of 1.07 and 0.95 for 4% and 6% Al-doped NiO films, respectively, at a low NH 3 concentration of 4 ppm. The enhanced sensing performance of Al-doped NiO nanostructures highlights their potential as an effective sensor layer for low-concentration NH 3 detection in practical applications
Authors
- Aninamol Ani (ORCID: https://orcid.org/0000-0002-3580-4274)
- P. Poornesh (ORCID: https://orcid.org/0000-0002-3608-6294)
- Saikat Chattopadhyay (ORCID: https://orcid.org/0000-0002-8029-8040)
- Ramseena Thundiyil (ORCID: https://orcid.org/0000-0001-8734-5703)
- S. M. Hegde
- Tanya Sood (ORCID: https://orcid.org/0009-0002-3547-6415)
Institutions
- Manipal Academy of Higher Education (IN)
- Manipal University Jaipur
Publication Details
- Journal
- Physica Scripta
- Published
- 2025-03-13
- DOI
- https://doi.org/10.1088/1402-4896/adc045
- Citations
- 1
- Primary Topic
- Gas Sensing Nanomaterials and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- Science and Engineering Research Board