GaN Photoconductivity Simulation Imaging Method Based on EIT Technology

With the continuous development of electronic technology, the frontier research on semiconductor materials with excellent properties has become a significant direction in the field of condensed matter physics. Among them, the third-generation semiconductor material GaN is an ideal semiconductor material. However, there are still issues with the detection methods for some of its physical and chemical properties. At the same time, Electrical Impedance Tomography (EIT) technology, as a mature medical technique, can quickly obtain electrical impedance tomography results and may exhibit excellent performance in detecting certain properties of GaN materials. Accordingly, this paper starts from the detection of the photoconductive effect and introduces medical EIT technology into the simulation imaging of GaN photoconductivity. The principle of this simulation method is elaborated, and the three selected algorithms are deeply analyzed. The simulation results are analyzed and compared in terms of errors. The advantages and existing problems of this method are summarized, and future prospects are discussed.