Circulating current suppression strategy for SI/SIC hybrid device

In response to the significant temperature disparities caused by circulating currents in Si IGBT/SiC MOSFET hybrid devices, which limit the full exploitation of their advantages, a strategy for suppressing circulating currents in Si/SiC hybrid devices is proposed in this paper. By adopting an innovative driving mode, the adverse effects of circulating currents on SiC MOSFETs are mitigated. Compared to traditional control methods that rely on fixed switch delays, it is shown that the proposed approach effectively distributes thermal loads across each unit within the hybrid device, thereby reducing the risk of localized overheating. As a result, the maximum junction temperature difference between the two units of the hybrid device is reduced to 6.62°C.