Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa<sub>2</sub>O<sub>4</sub>

ZnGa<sub>2</sub>O<sub>4</sub> demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa<sub>2</sub>O<sub>4</sub> films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa<sub>2</sub>O<sub>4</sub>, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 10<sup>5</sup> (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 <i>p</i>A in the forward direction and exhibited an exceptional dual-band UV-vis response with a photoresponsivity of 370 A/W and -3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10<sup>-19</sup> W/Hz<sup>1/2</sup>, and an ultrahigh detectivity of 1.23 × 10<sup>17</sup> Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 10<sup>5</sup> for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-03-13
DOI
https://doi.org/10.1021/acsami.4c20439
Citations
9
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
3.85

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article

Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4

Nahid Chaudhary, Taslim Khan, Rajendra Singh, Ray‐Hua Horng
9 citations
ACS Applied Materials & Interfaces
Ga2O3 and related materials
3.85
article

Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4

Nahid Chaudhary, Taslim Khan, Rajendra Singh, Ray‐Hua Horng
article en
9 citations

Abstract

ZnGa<sub>2</sub>O<sub>4</sub> demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa<sub>2</sub>O<sub>4</sub> films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa<sub>2</sub>O<sub>4</sub>, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 10<sup>5</sup> (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 <i>p</i>A in the forward direction and exhibited an exceptional dual-band UV-vis response with a photoresponsivity of 370 A/W and -3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10<sup>-19</sup> W/Hz<sup>1/2</sup>, and an ultrahigh detectivity of 1.23 × 10<sup>17</sup> Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 10<sup>5</sup> for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.

ACS Applied Materials & InterfacesVol. 17(12)
Semiconductor Manufacturing International (Italy) (IT), National Yang Ming Chiao Tung University (TW), Hodges University (US), Indian Institute of Technology Delhi (IN)
Council of Scientific and Industrial Research, India, Ministry of Education, India, Indian Institute of Technology Delhi, National Science and Technology Council
Openalex Percentile: Top 6%
Ga2O3 and related materials
3.85
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